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A new scalable self-aligned dual-bit split-gate charge-trapping memory device
- Source :
- IEEE Transactions on Electron Devices. Oct, 2005, Vol. 52 Issue 10, p2250, 7 p.
- Publication Year :
- 2005
-
Abstract
- A dual-bit trapping device, which solves most of the problems by using a split-gate structure, inspired by the HIMOS concept is presented. The device allows a high density thanks to dual-bit/cell storage and it is easily scalable since the structure is fully self-aligned and the bit areas are physically isolated.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 52
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.141375057