High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process

Authors :: Saito, Wataru
Omura, Ichiro
Aida, Satoshi
Koduki, Shigeo
Izumisawa, Masaru
Yoshioka, Hironori
Ogura, Tsuneo
Source :: IEEE Transactions on Electron Devices. Oct, 2005, Vol. 52 Issue 10, p2317, 6 p.
Publication Year :: 2005
Abstract: Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time realizing low on-resistance below the theoretical Si limit. The results show the possibility of new Si power-MOSFET with a higher application voltage range.

Subjects :: Metal oxide semiconductor field effect transistors -- Design and construction
Semiconductor preparation -- Methods
Silicon compounds -- Electric properties
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