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High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process
- Source :
- IEEE Transactions on Electron Devices. Oct, 2005, Vol. 52 Issue 10, p2317, 6 p.
- Publication Year :
- 2005
-
Abstract
- Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time realizing low on-resistance below the theoretical Si limit. The results show the possibility of new Si power-MOSFET with a higher application voltage range.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 52
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.141375969