X-ray photoelectron and Auger electron diffraction probing of Ge heteroepitaxyon Si (001) 2 x 1

The investigation of epitaxial molecular beam epitaxy growth of nanometric Germanium layers on silicon (001) 2 by 1, in situ, by X-ray silicon 2p photoelectron diffraction and Auger Ge LMM electron diffraction which consists primarily of preferential scattering of electrons in the direction of interatomic axes. The crystalline material quality and epitaxial perfection are affected by the residual pressure below a certain range, a decrease in the substrate temperature to room temperature, the deposition rate and the Ge overlayer thickness.