Infrared spectroscopy of chemically bonded hydrogen at voids and defects in silicon

The bonding of hydrogen in silicon maintaining both displacement defects and submicrometer voids was studied. Infrared-absorption and nuclear reaction analysis methods were used in the experiment. The conjunction of helium-ion implantation with high-temperature annealing yielded the voids. It was found that an upper limit for the binding energy of hydrogen at defects was indicated by the silicon-hydrogen bonds on the internal surfaces.