Epitaxial growth of oxides on semiconductors using flourides as a buffer layer

Authors :: Hung, L.S.
Mason, G.M.
Paz-Pujalt, G.R.
Agostinelli, J.A.
Mir, J.M.
Lee, S.T.
Blanton, T.N.
Ding, G.
Source :: Journal of Applied Physics. July 15, 1993, Vol. 74 Issue 2, p1366, 10 p.
Publication Year :: 1993
Abstract: The stability of flouride against oxidation and the reactivity of the flouride with the oxide influences the successful epitaxial growth of oxides on Si. This was ascertained using intermediate flouride layer X-ray diffractometry and Rutherford backscattering spectrometry to study the flouride oxide reaction. A large number of oxides are stable on CaF2, and some having K, Ba and Li react with CaF2.