Effect of annealing temperature on the hole concentration and lattice relacxation of carbon-doped GaAs and AlxGa1-xAs

The influence of the annealing temperature on the hole density and lattice relaxation of GaAs and AlxGa1-xAs doped with carbon was investigated. The results showed that annealing at temperatures equal to or lower than 550 degrees celsius resulted in increased hole concentration but decreased hole mobility. However, annealing of heavily doped samples at higher temperatures reduced the hole concentration but increased the lattice parameter of the epilayer.