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The effect of Si and Cu on the interactions between Al films and TiW barrier layer

Authors :
Chang, Peng-Heng
Chen, Huei-Ming
Liu, Hung-Yu
Source :
Journal of Applied Physics. Oct 1, 1992, Vol. 72 Issue 7, p2739, 4 p.
Publication Year :
1992

Abstract

The effect of Si and Cu doping of Al films on the interactions between the films and a TiW barrier layer was investigated. The results showed that Al12W was the primary product formed at the interface. Si-doping resulted in enhanced Al12W formation. When excess tungsten was present, Al12W reacted with W and formed compounds with a high W content. Prolonged annealing at 450 degrees celsius resulted in the formation of a hexagonal Al5W phase and a monoclinic Al4W phase in pure Al film.

Details

ISSN :
00218979
Volume :
72
Issue :
7
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.14280246