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Swelling of SiC under helium implantation
- Source :
- Journal of Applied Physics. Dec 1, 2005, Vol. 98 Issue 11, p113506-1, 6 p.
- Publication Year :
- 2005
-
Abstract
- The effect of high fluence helium implantation for different implant conditions and complementary techniques are used in order to separate the different contributions of swelling in silicon carbide (SiC). The elastic diffraction to swelling are obtained by integration of the strain profile determined by x-ray diffraction simulations.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 98
- Issue :
- 11
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.142803675