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Swelling of SiC under helium implantation

Authors :
Leclerc, S.
Declemy, A.
Beaufort, M.F.
Tromas, C.
Barbot, J.F.
Source :
Journal of Applied Physics. Dec 1, 2005, Vol. 98 Issue 11, p113506-1, 6 p.
Publication Year :
2005

Abstract

The effect of high fluence helium implantation for different implant conditions and complementary techniques are used in order to separate the different contributions of swelling in silicon carbide (SiC). The elastic diffraction to swelling are obtained by integration of the strain profile determined by x-ray diffraction simulations.

Details

Language :
English
ISSN :
00218979
Volume :
98
Issue :
11
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.142803675