Characterization of effective masses in InGaAsN quantum well structures by computer simulations

Authors :: Wartak, M.S.
Weetman, P.
Source :: Journal of Applied Physics. Dec 1, 2005, Vol. 98 Issue 11, p113705-1, 4 p.
Publication Year :: 2005
Abstract: Effective masses of holes in In(sub 0.36)Ga(sub 0.64)As(sub 1-x)N(sub x)/GaAs quantum well structures were determined and analyzed. The result shows that significant variation in the effective masses is possible by adjusting the relevant parameters.

Subjects :: Quantum wells -- Structure
Gallium arsenide semiconductors -- Design and construction
Nitrogen compounds -- Atomic properties
Indium -- Atomic properties
Physics

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