Back to Search
Start Over
Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealing
- Source :
- IEEE Transactions on Electron Devices. Jan, 1992, Vol. 39 Issue 1, p50, 6 p.
- Publication Year :
- 1992
-
Abstract
- The effects of rapid thermal annealing (RTA) and processing at low temperatures on the structures of high-electron-mobility transistors (HEMT) were studied. Planar doped structures, fabricated from metallic compounds such as gallium arsenide, indium gallium arsenide and aluminum gallium arsenide, were subjected to various laboratory tests. Results show that RTA temperatures above 700 degrees centigrade have adverse effects on the performance of HEMT structures.
Details
- ISSN :
- 00189383
- Volume :
- 39
- Issue :
- 1
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.14287488