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Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealing

Authors :
Sadwick, Larry P.
Streit, Dwight C.
Jones, William L.
Kim, C. W.
Hwu, R. Jennifer
Source :
IEEE Transactions on Electron Devices. Jan, 1992, Vol. 39 Issue 1, p50, 6 p.
Publication Year :
1992

Abstract

The effects of rapid thermal annealing (RTA) and processing at low temperatures on the structures of high-electron-mobility transistors (HEMT) were studied. Planar doped structures, fabricated from metallic compounds such as gallium arsenide, indium gallium arsenide and aluminum gallium arsenide, were subjected to various laboratory tests. Results show that RTA temperatures above 700 degrees centigrade have adverse effects on the performance of HEMT structures.

Details

ISSN :
00189383
Volume :
39
Issue :
1
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.14287488