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Monte Carlo simulation of electron transport in gallium nitride
- Source :
- Journal of Applied Physics. August 1, 1993, Vol. 74 Issue 3, p1818, 4 p.
- Publication Year :
- 1993
-
Abstract
- The Monte Carlo simulation of the electron transport in gallium nitride (GaN) reveals that the intervally electron transfer has a prominent role in GaN in high electric fields resulting in a strong inversion electron distribution greater than the thermal energy. The expression applies to several wide gap semiconductors such as the GaN and SiC at room temperatures.
Details
- ISSN :
- 00218979
- Volume :
- 74
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.14419629