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Engineering density of semiconductor-dielectric interface states to modulate threshold voltage in OFETs

Authors :
Annie Wang
Kymissis, Ioannis
Bulovic, Vladmimir
Akinwande, Ibitayo Akintunde
Source :
IEEE Transactions on Electron Devices. Jan, 2006, Vol. 53 Issue 1, p9, 5 p.
Publication Year :
2006

Abstract

The threshold voltage can be tuned through chemical treatment of the gate dielectric layer. It is shown that oxygen plasma treatment of an organic polymer gate di-electric, parylene, introduces traps at the semiconductor-dielectric interface that strongly affect the organic field-effect transistors (OFET) performance.

Details

Language :
English
ISSN :
00189383
Volume :
53
Issue :
1
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.144794212