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Engineering density of semiconductor-dielectric interface states to modulate threshold voltage in OFETs
- Source :
- IEEE Transactions on Electron Devices. Jan, 2006, Vol. 53 Issue 1, p9, 5 p.
- Publication Year :
- 2006
-
Abstract
- The threshold voltage can be tuned through chemical treatment of the gate dielectric layer. It is shown that oxygen plasma treatment of an organic polymer gate di-electric, parylene, introduces traps at the semiconductor-dielectric interface that strongly affect the organic field-effect transistors (OFET) performance.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 53
- Issue :
- 1
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.144794212