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Recessed-Gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications
- Source :
- IEEE Transactions on Electron Devices. Feb, 2006, Vol. 53 Issue 2, p356, 7 p.
- Publication Year :
- 2006
-
Abstract
- The recessed-gate structure approach is very effective for realizing normally off high-voltage AlGaN/GaN HEMTs because the gate threshold voltage can be controlled by the etching depth of the recess without significant increase in on-resistance characteristics. Most of the AlGaN/GaN HEMTs demonstrated have, normally during depletion mode, characteristics with gate threshold voltage and with enhancement mode characteristics strongly required for the power electronics applications.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 53
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.144852772