Fabrication of induced two-dimensional hole systems on (311)A GaAs

Authors :: Clarke, W.R.
Micolich, A.P.
Hamilton, A.R.
Simmons, M.Y.
Muraki, K.
Hirayama, Y.
Source :: Journal of Applied Physics. Jan 15, 2006, Vol. 99 Issue 2, 023707-1-023707-6
Publication Year :: 2006
Abstract: A method for fabricating induced two-dimensional hole devices in (311)A GaAs is demonstrated. This method uses a metallic p(super +)-GaAs capping layer thereby allowing very small gate biases to be used to induce a two-dimensional hole system at a AlGaAs/GaAs interface.