Defect electrical conduction in SIMOX buried oxides

Two kinds of defects were observed in SIMOX structures of buried oxide (BOX) layers, where defect-conduction was super imposed on background conduction. Defect conduction is reflected in large areas of Si/Box/Si capacitors. Conducting defect may be caused due to the lack of oxygen or excess of silicon. Noncrystalline SiO2 network with Si-Si bond is affected by the lack of oxygen. The conduction processes in thermally grown SiO2 films differ from the defect and bulk conduction processes in BOX.