Spectrometry of very long-current transients in almost ideal silicon p-n junctions

The characteristics of very long-current transients in almost ideal silicon p-n junctions were investigated. The results showed that the current transients produced in such junctions last for only a few hours and they are composed of four exponential terms whose relaxation times range from tens to a few thousands of seconds. These observations were attributed to the preceding defect centers generated by SiyOx clusters.