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Interfacial layer formation between Cu(In, Ga)Se2 and In(sub x)S(sub y) layers
- Source :
- Journal of Applied Physics. Dec 15, 2005, Vol. 98 Issue 12, p123512-1, 7 p.
- Publication Year :
- 2005
-
Abstract
- Experimental results and possible explanations will be presented on how substrate temperature and air annealing influence the interface between Cu(In, Ga)Se2 (CIGS) and powder evaporated In(sub x)S(sub y). These interfaces are studied by means of bright-field and high-resolution transmission electron microscopy.
- Subjects :
- Solar batteries -- Design and construction
Solar cells -- Design and construction
Indium -- Optical properties
Indium -- Atomic properties
Selenium compounds -- Optical properties
Selenium compounds -- Atomic properties
Copper compounds -- Optical properties
Copper compounds -- Atomic properties
Physics
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 98
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.145503988