Correlation of the electrical and optical properties of p-type CdGeAs2

CdGeAs2 crystals typically exhibit an absorption band near 5.5 mum that limits their use as a nonlinear frequency-conversion material in high-power infrared laser systems and this absorption band is related to the p-type nature of the as-grown bulk crystals. The variation in activation energy is correlated with p, and also with N(sub A) and finds excellent agreement with theory.