Nonequilibrium radiation of long-wavelength InAs/GaSb superlattice photodiodes

The emission behavior of binary-binary type-II InAs/GaSb superlattice photodiodes was studied in the spectral range between 8 to 13 mum. By evaluating the temperature dependence of the internal quantum efficiency of the radiative process, the Auger coefficient for n-type superlattice materials could be determined where the signature of an Auger-limited low-gap diode was seen as strong decrees of the internal quantum efficiency with increasing injection current.