Control of powder formation in silane discharge by cathode heating and hydrogen dilution for high-rate deposition of hydrogenated amorphous silicon thin films

Enhancing the rf power density facilitates the deposition of hydrogenated amorphous silicon films at increased growth rates, and gas phase polymerization in the plasma results in the formation of powder which is regulated. Cathode and anode are heated at the same time, and the temperature difference between the two is very less. Internal quantum efficiency calculations, infrared and optical vibrational spectroscopy, secondary photoconductivity and dark conductivity aid in examining the films.