Trap generation in cycled hot-electron-injection-programed/hot-hole-erased silicon-oxide-nitide-oxide-silicon memories

Generation of surface states and bulk traps in the bottom oxide of silicon-oxide-nitide-oxide-silicon memory cells with thick bottom programed hot-electron-injection-programmed/hot-hole-erased injection is investigated using charge-pumping technique. It is shown that the degradation of the bottom oxide under the hot hole stress is responsible for the shift of the programmed state threshold voltage in retention bake.