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Quantum-mechanical suppression and enhancement of SCEs in ultrathin SOI MOSFETs

Authors :
Omura, Yasuhisa
Konishi, Hideki
Sato, Shingo
Source :
IEEE Transactions on Electron Devices. April, 2006, Vol. 53 Issue 4, p677, 8 p.
Publication Year :
2006

Abstract

The transport characteristics of ultrathin silicon-on-insulator MOSFETs are simulated and the influence of the quantum-mechanical mechanism on the short channel effects is evaluated on the basis of the density-gradient model. It is clearly shown that the quantum-mechanical mechanism suppresses the buried-insulator-induced barrier lowering with regard to the subthreshold swing and it is suggested that the mechanism enhances the impact of the apparent charge-sharing effect on the threshold voltage.

Details

Language :
English
ISSN :
00189383
Volume :
53
Issue :
4
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.146194025