Quantum-mechanical suppression and enhancement of SCEs in ultrathin SOI MOSFETs

The transport characteristics of ultrathin silicon-on-insulator MOSFETs are simulated and the influence of the quantum-mechanical mechanism on the short channel effects is evaluated on the basis of the density-gradient model. It is clearly shown that the quantum-mechanical mechanism suppresses the buried-insulator-induced barrier lowering with regard to the subthreshold swing and it is suggested that the mechanism enhances the impact of the apparent charge-sharing effect on the threshold voltage.