Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

The influence of silicon nanocrystal (nc-Si) distributed in the gate oxide on the capacitance is studied for the circumstances that the nc-Si does not form conductive percolation tunneling paths connecting the gate to the substrate, by synthesizing the nc-Si by Si-ion implantation. An excellent agreement is achieved between the MOS capacitance from the modeling and capacitance measurements for several samples, and the influence of implantation energy and implantation dosage on MOS capacitance is studied.