Investigation of indium doping in InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure lasers

Proper amount of Indium (IN) doping in the graded-index guiding layer on threshold current densities of InGaAs/GaAs strained graded-index separated confinement heterostructure quantum well (GRINSCH-QW) lasers produces a reduction in threshold current densities of the GRINSCH-QW laser. Reduction in group III vacancies which are produced by high migration rate of the Indium atoms causes a reduction of the threshold current densities. A comparison of the effects of In doping and heat treatment on laser performance shows that In doped lasers have a lower threshold current density than non-In-doped lasers.