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Nitrogen doping in hydrogenated amorphous silicon

Authors :
Jiang-Huai Zhou
Kengou Yamaguchi
Yoshikazu Yamamoto
Tatsuo Shimizu
Source :
Journal of Applied Physics. Oct 15, 1993, Vol. 74 Issue 8, p5086, 4 p.
Publication Year :
1993

Abstract

A study of the doping effect of N in amorphous Si:H shows it to be a bulk property when thickness dependence is absent. N functions as a donor in amorphous-Si:H, and this is indicated by a similarity between the effect of N doping and that of P doping in the conductivity. N doping is of substitutional type.

Details

ISSN :
00218979
Volume :
74
Issue :
8
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.14638264