Back to Search
Start Over
Nitrogen doping in hydrogenated amorphous silicon
- Source :
- Journal of Applied Physics. Oct 15, 1993, Vol. 74 Issue 8, p5086, 4 p.
- Publication Year :
- 1993
-
Abstract
- A study of the doping effect of N in amorphous Si:H shows it to be a bulk property when thickness dependence is absent. N functions as a donor in amorphous-Si:H, and this is indicated by a similarity between the effect of N doping and that of P doping in the conductivity. N doping is of substitutional type.
Details
- ISSN :
- 00218979
- Volume :
- 74
- Issue :
- 8
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.14638264