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Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams
- Source :
- Journal of Applied Physics. May 15, 2006, Vol. 99 Issue 10, p106105-1, 3 p.
- Publication Year :
- 2006
-
Abstract
- A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation and the electrical characteristics of the nc-Si structure are examined. A steplike flatband voltage shift as a function of changing voltage is observed, indicating single electron or hole trapping in the nc-Si at room temperature, whereas the nc-Si structure has shown good charge-retention characteristics.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 99
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.148087625