Deposition of high quality TiN films by excimer laser ablation in reactive gas

Highly pure and hard face centered cubic (fcc) TiN films, deposited on cold silicon wafers, promotes Ti target ablation, which occurs under multipulse excimer laser irradiation in a low pressure atmosphere of nitrogen gas. The ablation of Ti targets does not require any thermal treatment. An increase in the surrounding temperature causes a degradation of the crystallinity of the TiN films, although the films are stoichiometric.