The achievement of near-theoretical-minimum contact resistance to InP

Authors :: Fatemi, Navid S.
Weizer, Victor G.
Source :: Journal of Applied Physics. Dec 1, 1993, Vol. 74 Issue 11, p6740, 7 p.
Publication Year :: 1993
Abstract: An examination of the InP/Au/Ni contact system reveals its metallurgical and electrical characteristics. Subsequent to sintering, very low values of particular contact resistivity Rc results due to the addition of a layer of Au between n-InP and Ni contact metallization. The thickness of the Au layer is 100 angstroms or more.