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Strong in-plane optical anisotropy of asymmetric (001) quantum wells

Authors :
Y.H. Chen
X.L. Ye
B. Xu
Z.G. Wang
Source :
Journal of Applied Physics. May 1, 2006, Vol. 99 Issue 9, p096102-1, 3 p.
Publication Year :
2006

Abstract

The in-plane optical anisotropy (IPOA) of asymmetric (001) GaAs/AlGaAs quantum wells (QWs) is investigated, where the asymmetry is introduced via the insertion of a monolayer of InAs or AlAs at the interfaces of the QWs. The results show that the insertion of monolayer material at interfaces provides a convenient way to control IPOA in (001) QWs.

Subjects

Subjects :
Reflectance -- Analysis
Quantum wells -- Optical properties
Quantum wells -- Structure
Aluminum compounds -- Optical properties
Gallium arsenide -- Optical properties
Physics

Details

Language :
English
ISSN :
00218979
Volume :
99
Issue :
9
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.149017453

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