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Effect of SIIS on work function of self-aligned PtSi FUSI metal-gated capacitors
- Source :
- IEEE Transactions on Electron Devices. May, 2006, Vol. 53 Issue 5, p1180, 6 p.
- Publication Year :
- 2006
-
Abstract
- A novel self-aligned fully silicided (FUSI) gate process for the integration of platinum monosilicide (PtSi) as a metal gate for pMOS applications is described. The correlation between the work function shift caused by the segregated impurities at the gate/dielectric interface and the atomic size and surface dipole can be explained by the variation of the surface dipole, placing the impurity atoms exactly at the gate/dielectric interface.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 53
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.149148958