Effect of SIIS on work function of self-aligned PtSi FUSI metal-gated capacitors

A novel self-aligned fully silicided (FUSI) gate process for the integration of platinum monosilicide (PtSi) as a metal gate for pMOS applications is described. The correlation between the work function shift caused by the segregated impurities at the gate/dielectric interface and the atomic size and surface dipole can be explained by the variation of the surface dipole, placing the impurity atoms exactly at the gate/dielectric interface.