Single-event upset in flip-chip SRAM induced by through-wafer, two-photon absorption

The single-event upset response of a single-event hardened SRAM 10-transistor cell is mapped in two dimensions via carrier injection by two-photon absorption through the back (substrate) surface in a flip-chip mounted 4 Mb SRAM. Using through-wafer carrier injection, charge is deposited into the active regions of the device at well-defined locations in a reproducible manner, and the single-event upset sensitive region of the device is localized to within [+ or -]0.3 micrometers. Index Terms--Laser SEE, nonlinear absorption, single-event effects, SEE, SEU, silicon, SRAM.