Interfacial reactions in ultrahigh vacuum deposited Y-Si multilayer thin films

Conventional and high-resolution transmission electron microscopy, Auger electron spectroscopy and X-ray diffraction are used to study interfacial reactions that occur in ultrahigh vacuum deposited Y-Si multilayer thin films. Multilayers composed of YSi2 form a 65-nm-thick amorphous Y-Si intermixing layer at room temperature. Annealing of the samples at 250-350 degrees Celsius leads to homogenization of atomic composition, although the multilayer maintains its amorphous state.