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Interfacial reactions in ultrahigh vacuum deposited Y-Si multilayer thin films
- Source :
- Journal of Applied Physics. Feb 15, 1994, Vol. 75 Issue 4, p2007, 8 p.
- Publication Year :
- 1994
-
Abstract
- Conventional and high-resolution transmission electron microscopy, Auger electron spectroscopy and X-ray diffraction are used to study interfacial reactions that occur in ultrahigh vacuum deposited Y-Si multilayer thin films. Multilayers composed of YSi2 form a 65-nm-thick amorphous Y-Si intermixing layer at room temperature. Annealing of the samples at 250-350 degrees Celsius leads to homogenization of atomic composition, although the multilayer maintains its amorphous state.
Details
- ISSN :
- 00218979
- Volume :
- 75
- Issue :
- 4
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.15108869