Enhanced electrical conductivity of zinc oxide thin films by ion implantation of gallium, aluminum, and boron atoms

Ion implantation techniques are used for implanting Ga, Al and B into nondoped ZnO thin films. ZnO is highly conductive when Ga, Al and B doses are greater than 1 times 10(super 17) ions/sq. cm. While Ga doping increases ZnO film conductivity, B doping is the least effective. Increase in conductivity is proportional to the electronegativity of the dopants.