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Laser-induced latchup screening and mitigation in CMOS devices
- Source :
- IEEE Transactions on Nuclear Science. August, 2006, Vol. 53 Issue 4, p1819, 6 p.
- Publication Year :
- 2006
-
Abstract
- The application of the pulsed laser approach for identifying latch-up sensitive regions in CMOS circuitry is described. The utility of this approach for preliminary latchup screening of both COTS and space-qualified parts for applications in radiation environments is described. An application of hardening-by-design principles in which a space-qualified CMOS product is modified, based on the pulsed laser results, to be latchup immune, is presented in detail. The design modifications are described. Index Terms--CMOS, laser, latchup, micro-latchup, picosecond, single-event effects, single-event latchup (SEL).
- Subjects :
- Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 53
- Issue :
- 4
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.151275277