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Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using C[F.sub.4] plasma treatment
- Source :
- IEEE Transactions on Electron Devices. Sept, 2006, Vol. 53 Issue 9, p2223, 8 p.
- Publication Year :
- 2006
-
Abstract
- The monolithic integration of enhancement/depletion-mode (E/D-mode) HEMTs in the GaN material system is demonstrated based on a novel technique of fabricating high-performance E-mode HEMT using fluoride-based C[F.sub.4] plasma treatment. The integration technology, used to fabricate integrated AlGaN/GaN HEMT inverters and ring oscillators for evaluating the performance of the digital IC technology, results in an improved input voltage swing by about 1V for the E-mode HEMT.
- Subjects :
- High-electron-mobility transistors -- Design and construction
Gallium compounds -- Electric properties
Nitrides -- Electric properties
Aluminum compounds -- Electric properties
Integrated circuit fabrication -- Methods
Integrated circuit fabrication
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 53
- Issue :
- 9
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.152549059