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Experimental method to thermally deembed pads from R[sub TH] measurements

Authors :
James Chingwei Li
Hitko, Donald A.
Sokolkich, Marko
Asbeck, Peter M.
Source :
IEEE Transactions on Electron Devices. Oct, 2006, Vol. 53 Issue 10, p2540, 5 p.
Publication Year :
2006

Abstract

Test structures with various width metal traces between the emitter pad and the device's emitter are fabricated in a 200-GHz InP double heterojunction bipolar transistor (HBT) process. A method of using the measured thermal resistance (R[sub TH]) of these structures and a simple resistive network model to deembed the pads is presented.

Subjects

Subjects :
Bipolar transistors -- Design and construction
Bipolar transistors -- Thermal properties
Indium -- Thermal properties
Indium -- Electric properties
Semiconductor device
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
53
Issue :
10
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.153940732

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