Microwave large-signal effects on the low-frequency noise characteristics of GaInP/GaAs HBTs

The effects of a microwave tone on the low-frequency noise properties of GaInP/GaAs heterojunction bipolar transistors are investigated both experimentally and through simulations, to ascertain which modulation strategy should be adopted for the low-frequency noise sources when they should face large signal conditions, as in the cases of oscillators and mixers. Experiments revealed that the application of a microwave tone on the base terminal reduces the magnitude of the base current and collector current fluctuation spectra.