Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory

Authors :: Wouters, D.J.
Willegems, M.
Monchoix, H.
Schaekers, M.
Maes, D.
Boullart, W.
Meeren, H. Vander
Zambrano, R.
Vecchio, G.
Goux, L.
Everaert, J.-L.
Haspesiagh, L.
Russo, G.
Autryve, L. Van
Lisoni, J.G.
Schwitters, M.
Artoni, C.
Corallo, G.
Paraschiv, V.
Johnson, J.A.
Caputa, C.
Casella, P.
Source :: Journal of Applied Physics. Sept 1, 2006, Vol. 100 Issue 5, 051603-1-051603-16
Publication Year :: 2006
Abstract: Different aspects of the integration of strontium bismuth tantalate (SBT)-based high-density ferroelectric random access memory (FeRAM) is discussed in relation to the fabrication of pseudo-three-dimensional (3D) cell structure. The excellent electrical and reliability properties of the small integrated FeCAP prove the feasibility of the technology, while the verification of the potential electrical 3D effect confirms the basic scaling potential of the concept beyond that of the single-mask capacitor.

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