High-performance uniaxially strained SiGe-on-insulator pMOSFETs fabricated by lateral-strain-relaxation technique

Authors :: Irisawa, Toshifumi
Numata, Toshinori
Tezuka, Tsutomu
Shin-Ichi Takagi
Usuda, Koji
Toyoda, Eiji
Hirahita, Norio
Sugiyama, Naoharu
Source :: IEEE Transactions on Electron Devices. Nov, 2006, Vol. 53 Issue 11, p2809, 7 p.
Publication Year :: 2006
Abstract: Novel uniaxially strained SiGe-on-insulator (SGOI) pMOSFETs with Ge content of 20% is successfully fabricated by utilizing lateral strain-relaxation process on globally strained SGOI substrates. Drastic increase of drain current (80%) caused by the change of strain from biaxial to uniaxial and the mobility enhancement of about 100% against the control Si-on-insulator pMOSFETs are observed in SGOI pMOSFET.

Subjects :: Metal oxide semiconductor field effect transistors -- Design and construction
Germanium -- Electric properties
Silicon-on-isolator -- Methods
Business
Electronics
Electronics and electrical industries

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