Influence of oxygen on the performance of GaAs/AlGaAs quantum well infrared photodetectors

Authors :: Tsai, K.L.
Lee, C.P.
Chang, K.H.
Chen, H.R.
Tsang, J.S.
Source :: Journal of Applied Physics. July 1, 1994, Vol. 76 Issue 1, p274, 4 p.
Publication Year :: 1994
Abstract: GaAs/AlGaAs quantum well infrared photodetectors (QWIP), when treated with low oxygen concentration, demonstrated a higher performance than QWIPs treated with high oxygen concentrations. Photoluminescence and secondary ion mass spectroscopy were used to study the effect of oxygen on QWIP performance. Oxygen atoms effectively lowered the dark current and responsivity of QWIP.

Subjects :: Photodetectors -- Design and construction
Oxygen -- Analysis
Photoluminescence -- Analysis
Physics

Tools