Valence and conduction intersubband transitions in SiGe, Ge-rich, quantum wells on [001] [Si.sub.0.5][Ge.sub.0.5] substrates: A tight-binding approach

The electronic and optical properties of germanium-rich Si/SiGe quantum wells grown on [Si.sub.0.5][Ge.sub.0.5] substrates are examined by a nearest neighbor tight-binding Hamiltonian. The results for group IV conduction intersubband transitions might help in the project of devices for terahertz applications.