Determination of ionization energies of the nitrogen donors in 6H-SiC by admittance spectroscopy

Admittance spectroscopy helps analyze the nitrogen donor states of Schottky barriers developed at various frequencies on n-type epitaxial 6H-SiC layers. The spectroscopic measurements yield accurate values for the ionization energies of the donor states. Two electron traps present in the energy levels associate with cubic and hexagonal sites of nitrogen donor states.