Back to Search
Start Over
High-performance low-cost organic field-effect transistors with chemically modified bottom electrodes
- Source :
- Journal of the American Chemical Society. Dec 27, 2006, Vol. 128 Issue 51, 16418-16419
- Publication Year :
- 2006
-
Abstract
- The outstanding electronic properties of low-cost organic transistors and invertors that use the M-TCNQ (M-Ag or Cu)-modified Ag or Cu source-drain (S-D) electrodes in bottom-contact configurations are described. It is shown that the contact resistance and energetic mismatch typically observed with the low-cost bare electrodes in the petacene bottom-contact organic field-effect transistors (OFETs) can be properly removed.
Details
- Language :
- English
- ISSN :
- 00027863
- Volume :
- 128
- Issue :
- 51
- Database :
- Gale General OneFile
- Journal :
- Journal of the American Chemical Society
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.158701156