High-performance low-cost organic field-effect transistors with chemically modified bottom electrodes

The outstanding electronic properties of low-cost organic transistors and invertors that use the M-TCNQ (M-Ag or Cu)-modified Ag or Cu source-drain (S-D) electrodes in bottom-contact configurations are described. It is shown that the contact resistance and energetic mismatch typically observed with the low-cost bare electrodes in the petacene bottom-contact organic field-effect transistors (OFETs) can be properly removed.