Effect of oxidation on the chemical bonding structure of PECVD Si[N.sub.x] thin films

Authors :: Jehanathan, Neerushana
Yinong Liu
Walmsley, Byron
Dell, John
Saunders, Martin
Source :: Journal of Applied Physics. Dec 15, 2006, Vol. 100 Issue 12, p123516-1, 7 p.
Publication Year :: 2006
Abstract: The effect of oxidation on the chemical bonding structures of silicon nitride thin films synthesized by a low-temperature plasma-enhanced chemical vapor deposition (PECVD) method is investigated. The crystalline silicon dioxide is found to be stoichiometric Si[O.sub.2], whereas the remaining matrix is found to be a nonstoichiometric silicon oxynitride conforming to the random bonding model.

Subjects :: Fourier transform infrared spectroscopy -- Usage
Oxidation-reduction reaction -- Research
Chemical vapor deposition -- Methods
Silicon nitride -- Electric properties
Silicon nitride -- Optical properties
Stoichiometry -- Research
Physics

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