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Origin of deep level defect related photoluminescence in annealed InP

Authors :
Youwen Zhao
Zhiyuan Dong
Shanshan Miao
Aihong Deng
Jun Yang
Bo Wang
Source :
Journal of Applied Physics. Dec 15, 2006, Vol. 100 Issue 12, p123519-1, 4 p.
Publication Year :
2006

Abstract

The deep level defects in annealed InP are investigated by using photoluminescence (PL) spectroscopy, thermally stimulated current (TSC), deep level transient spectroscopy (DLTS) and positron annihilation lifetime (PAL). The results have identified the divacancy defect, its related PL emission and trap level.

Subjects

Subjects :
Photoluminescence -- Research
Indium -- Optical properties
Phosphorus compounds -- Optical properties
Semiconductors -- Impurity distribution
Semiconductors -- Methods
Physics

Details

Language :
English
ISSN :
00218979
Volume :
100
Issue :
12
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.159676869

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