Impact of halo doping on the subthreshold performance of deep-submicrometer CMOS devices and circuits for ultralow power analog/mixed-signal applications

The effects of double-halo (DH) and single-halo or lateral asymmetric channel (LAC) doping on the subthreshold analog performance of 100-nm CMOS devices are investigated. The results have shown that the CMOS amplifiers made with the halo implanted devices have higher voltage gain over their conventional counterpart and the voltage gain has improved even when LAS doping is made on both the p- and n-channel devices of the amplifier.