Hole mobility and thermal velocity enhancement for uniaxial stress in Si up to 4 GPa

The k.p bandstructure program is used to measure the full band structure of [110] uniaxially stressed Si, with tensile and compressive stress ranging from 50 MPa to 2GPa in order to study the response of hole mobility and thermal velocity for short channel devices. The results have shown that the increase in both thermal velocity and mobility with compressive stress have continued up to approximately the 4-GPa limit of the simulations where each finally appears near saturation.