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A bidirectional isolated dc--dc converter as a core circuit of the next-generation medium-voltage power conversion system
- Source :
- IEEE Transactions on Power Electronics. March, 2007, Vol. 22 Issue 2, p535, 8 p.
- Publication Year :
- 2007
-
Abstract
- This paper describes a bidirectional isolated dc--dc converter considered as a core circuit of 3.3-kV/6.6-kV highpower-density power conversion systems in the next generation. The dc--dc converter is intended to use power switching devices based on silicon carbide (SiC) and/or gallium nitride, which will be available on the market in the near future. A 350-V, 10-kW and 20 kHz dc--dc converter is designed, constructed and tested. It consists of two single-phase full-bridge converters with the latest trench-gate insulated gate bipolar transistors and a 20-kHz transformer with a nano-crystalline soft-magnetic material core and litz wires. The transformer plays an essential role in achieving galvanic isolation between the two full-bridge converters. The overall efficiency from the dc-input to dc-output terminals is accurately measured to be as high as 97%, excluding gate drive and control circuit losses from the whole loss. Moreover, loss analysis is carried out to estimate effectiveness in using SiC-based power switching devices. Loss analysis clarifies that the use of SiC-based power devices may bring a significant reduction in conducting and switching losses to the dc--dc converter. As a result, the overall efficiency may reach 99% or higher. Index Terms--Bidirectional isolated dc--dc converter, mediumvoltage power conversion systems, power density, wide-band-gap semiconductors.
Details
- Language :
- English
- ISSN :
- 08858993
- Volume :
- 22
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.161010780