He induced nanovoids for point-defect engineering in B-implanted crystalline Si

The formation of He ion implantation induced nanovoids in Si and its influence on the self-interstitial (Is) supersaturation, thus affecting the diffusion and electrical activation of implanted boron in crystalline silicon are described. The uniform nanovoid distribution has determined a peculiar B box like shape and the simulation of B diffusion has indicated that changes in the B profile are attributed to a local suppression of the interstitial supersaturation (S) caused by the presence of the nanovoids.