Alloying of Ga[N.sub.x][As.sub.1-x] with In[N.sub.x][As.sub.1-x]: A simple formula for the band gap parametrization of [Ga.sub.1-y][In.sub.y][N.sub.x][As.sub.1-x] alloys

An alternative approach is developed for calculating the band gap energy of dilute nitride ternary alloys, [Ga.sub.1-y][In.sub.y][N.sub.x][As.sub.1-x]. The band gap energy for dilute nitride binary alloys, Ga[N.sub.x][As.sub.1-x] and In[N.sub.x][As.sub.1-x] alloys, and a bowing parameter are used to predict the band gap energy [Ga.sub.1-y][In.sub.y][N.sub.x][As.sub.1-x], which is in good agreement with the experimental data for as-grown materials.